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Low-power 10-bit 100 MS/s pipelined ADC in digital CMOS technology

机译:采用数字CMOS技术的低功耗10位100 MS / s流水线ADC

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摘要

A 10-bit pipelined analogue-to-digital converter (ADC) at a sampling rate of 100 MS/s utilising only metal-oxide-semiconductor (MOS) transistors is presented and designed in 1.8 V 0.18 μm standard digital complementary MOS (CMOS) n-well technology. The internal gain of value 2 of the intermediate stages is achieved by using a charge-pump-based concept that avoids the use of power-area inefficient operational amplifier. All the capacitors are realised by capacitors implemented by metal-oxide-semiconductor field-effect transistors (MOSCAPs) that allows easy integration with any inexpensive standard digital CMOS technology, and altogether giving low area-power-cost solution. A low DC gain CMOS differential amplifier in source follower configuration is used and low gain effects are calibrated digitally in the background. Peak differential non-linearity (DNL) improves from -1/+0.27 least significant bit (LSB) to -0.43/+0.57 LSB and peak integral non-linearity (INL) is reduced from -9.56/+9.3 LSB to within range of ±0.5 LSB after calibration. Also signal-to-noise plus distortion ratio (SNDR) and spurious-free dynamic range (SFDR) increase to 65.4 and 72.08 dB, respectively, after calibration.
机译:提出并采用1.8 V 0.18μm标准数字互补MOS(CMOS)设计并设计了一个10位流水线模数转换器(ADC),其采样速率为100 MS / s,仅使用金属氧化物半导体(MOS)晶体管。 n -井技术。中间级的值2的内部增益是通过使用基于电荷泵的概念实现的,该概念避免了使用功率区域效率低的运算放大器。所有电容器均由金属氧化物半导体场效应晶体管(MOSCAP)实现的电容器实现,该电容器可轻松与任何廉价的标准数字CMOS技术集成,并提供低面积,功耗成本的解决方案。使用源极跟随器配置中的低DC增益CMOS差分放大器,并在后台数字校准低增益效应。峰值差分非线性(DNL)从-1 / + 0.27最低有效位(LSB)提高到-0.43 / + 0.57 LSB,峰值积分非线性(INL)从-9.56 / + 9.3 LSB降低到校准后为±0.5 LSB。校准后,信噪比和失真比(SNDR)和无杂散动态范围(SFDR)分别增加到65.4和72.08 dB。

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