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首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >A 0.009–1.4-GHz Frequency Synthesizer With Suppressed Transients During VCO Band Switching
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A 0.009–1.4-GHz Frequency Synthesizer With Suppressed Transients During VCO Band Switching

机译:在VCO频带切换期间具有瞬变抑制的0.009–1.4 GHz频率合成器

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摘要

This brief presents a 0.009–1.4-GHz frequency synthesizer that is able to compensate for changes in the frequency tuning range, due to temperature variations, by switching voltage-controlled oscillator (VCO) bands with minimal phase and frequency errors, without cycle slipping and without introducing any phase offsets. This is accomplished by a subthreshold capacitor bank switching circuit that causes the gradual addition of capacitance slowly enough to allow the loop to adjust the VCO control voltage to compensate. The additional circuitry uses less than 0.001 mm of silicon area and has minimal power consumption and minimal effects on the synthesizer's phase noise when fully switched. The synthesizer used to demonstrate this was implemented in a 0.18- SiGe BiCMOS process and achieves 365-fs integrated jitter at 1.05 GHz, with a total power consumption of 81 mW. Measurements of the capacitor bank switching circuit shows that it prevents cycle slipping during band switching and reduces the maximum frequency deviation by 99.3%.
机译:本简介介绍了一种0.009-1.4-GHz频率合成器,它能够通过切换具有最小相位和频率误差的压控振荡器(VCO)频段来补偿由于温度变化引起的频率调谐范围的变化,而不会出现周期滑差和而不引入任何相位偏移。这是通过一个亚阈值电容器组开关电路来完成的,该电路使电容的逐渐增加速度足够慢,以允许环路调节VCO控制电压进行补偿。附加电路使用的硅面积小于0.001 mm,完全切换时具有最小的功耗和对合成器相位噪声的最小影响。用于演示此功能的合成器以0.18-SiGe BiCMOS工艺实现,并在1.05 GHz时实现365-fs的集成抖动,总功耗为81 mW。电容器组开关电路的测量结果表明,它可以防止频带切换期间的周跳,并将最大频率偏差降低99.3%。

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