The First Ever Real Bistable Memristors—Part II: Design and Analysis of a Local Fading Memory System

摘要

Part I has provided theoretical insights on the concept of local fading memory and analyzed a purely mathematical memristor model that, under dc and ac periodic stimuli, experiences memory loss in each of the basins of attraction of two locally stable state-space attractors. This brief designs the first ever real memristor with bistable stationary dc and ac behavior. A rigorous theoretical analysis unveils the key mechanisms behind the emergence of nonunique asymptotic dynamics in this novel electronic circuit, falling into the class of extended memristors.