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Pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser

机译:预泵浦无源调Q Nd:YAG / Cr:YAG微芯片激光器

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摘要

A pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser is demonstrated with a peak power of 7.5 kW at pulse repetition rate of serveral kilohertzs. The full-width at half-maximum (FWHM) is 734 ps, and the pulse energy is 5.5 μ3 with a fundamental spatial mode. In this system, the pre-pumped microchip laser of Nd:YAG/Cr:YAG wafer which is bonded through the thermal-bonding technique has achieved a time jitter value of 12 μs and a Q-switched amplitude instability of 1.26% (1δ) through the pre-pumped modulation technique.
机译:预先泵浦的无源Q开关Nd:YAG / Cr:YAG微芯片激光器在服务器千赫兹的脉冲重复频率下具有7.5 kW的峰值功率。半高全宽(FWHM)为734 ps,在基本空间模式下,脉冲能量为5.5μ3。在该系统中,通过热键合技术键合的Nd:YAG / Cr:YAG晶片预泵浦微芯片激光器的时间抖动值为12μs,Q开关幅度不稳定性为1.26%(1δ)通过预泵浦调制技术。

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