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首页> 外文期刊>Chinese Journal of Mechanical Engineering >FABRICATION OF PIEZOELECTRIC BIMORPH USING LEAD ZIRCONATE TITANATE THIN FILM DEPOSITED BY HYDROTHERMAL METHOD
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FABRICATION OF PIEZOELECTRIC BIMORPH USING LEAD ZIRCONATE TITANATE THIN FILM DEPOSITED BY HYDROTHERMAL METHOD

机译:水热法沉积铅酸钛酸盐钛薄膜制备压电BIMORPH

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摘要

In order to describe the characteristics of piezoelectric bimorph, properties of lead zirconate titanate (LZT) film are studied by X-ray diffraction (XRD) and scanning eletron microscope (SEM). The ratio of PbTiO_3/PbZrO_3 in LZT is 53/47, which is around morphotropic phase boundary (MPB). LZT film is composed of cubic particles with the average size of 5 urn. Density of thin film is figured out through the datum measured in experiments. The displacement model used to analyze the driving ability of bimorph is set up, and the effect of elastic intermediate layer is taken into account. Piezoelectric coefficient of LZT film is worked out by using the displacement model. Experiments of driving ability show that deformation of bimorph free end does not increase with times of crystal growth processes and the maximum deformation is obtained after two times crystal growth processes. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph is obtained.
机译:为了描述压电双压电晶片的特性,通过X射线衍射(XRD)和扫描电子显微镜(SEM)研究了锆钛酸铅(LZT)薄膜的性能。 LZT中PbTiO_3 / PbZrO_3的比率为53/47,大约在同相相界(MPB)附近。 LZT薄膜由平均粒径为5微米的立方颗粒组成。通过实验中测得的数据算出薄膜的密度。建立了用于分析双压电晶片驱动能力的位移模型,并考虑了弹性中间层的作用。利用位移模型计算出了LZT薄膜的压电系数。驱动能力的实验表明,双晶自由端的变形不会随晶体生长过程次数的增加而增加,并且在两次晶体生长过程之后才能获得最大的变形。最后,研究了双压电晶片的铁电性能并获得了双压电晶片的矫顽电压。

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