Copper CVD Precursors Containing Alkyl 3-Oxobutanoate Ligands

摘要

The need for high-performance interconnetion materials increases as the design rules for intergrated circuits shrink below 0.5 μm. Copper film has attracted much attention due to its high conductivity as well as high electromigration resistance. Conventional processing has been reported to be problematic to fill features with aspect ratios even as low as 1.0 without creating internal voids. The chemical vapor deposition (CVD) method is one of the techniques under investigation to effectively fill high-aspect ratio holes of sub-half-micron scale.