Highly-dispersed boron-doped graphene nanoribbons with enhanced conductibility and photocatalysis

摘要

Highly-dispersed boron-doped graphene nanoribbons (B-GNRs), prepared by a simple vacuum activation method, exhibit p-type semiconductor properties and provide many more zigzag- and armchair-edges to facilitate control of the bandgap. B-GNRs are used for the photodegradation of Rhodamine B in order to demonstrate their excellent conductivity and photocatalytic activity.