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Temperature dependent growth and optical properties of SnO2 nanowires and nanobelts

机译:SnO 2 纳米线和纳米带的温度依赖性生长及其光学性质

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SnO2 nanowires and nanobelts have been grown by the thermal evaporation of Sn powders. The growth of nanowires and nanobelts has been investigated at different temperatures (750–1000°C). The field emission scanning electron microscopic and transmission electron microscopic studies revealed the growth of nanowires and nano-belts at different growth temperatures. The growth mechanisms of the formation of the nanostructures have also been discussed. X-ray diffraction patterns showed that the nanowires and nanobelts are highly crystalline with tetragonal rutile phase. UV-visible absorption spectrum showed the bulk bandgap value (∼ 3–6 eV) of SnO2. Photoluminescence spectra demonstrated a Stokes-shifted emission in the wavelength range 558–588 nm. The Raman and Fourier transform infrared spectra revealed the formation of stoichiometric SnO2 at different growth temperatures.
机译:SnO 2 纳米线和纳米带通过锡粉的热蒸发而生长。已经研究了在不同温度(750–1000°C)下纳米线和纳米带的生长。场发射扫描电子显微镜和透射电子显微镜研究揭示了纳米线和纳米带在不同生长温度下的生长。还讨论了形成纳米结构的生长机理。 X射线衍射图谱表明,纳米线和纳米带是高度结晶的,具有四方金红石相。紫外可见吸收光谱显示SnO 2 的体带隙值(约3–6 eV)。光致发光光谱表明在558-588 nm波长范围内发生了斯托克斯位移发射。拉曼和傅立叶变换红外光谱揭示了在不同生长温度下化学计量的SnO 2 的形成。

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