Effect of thin Mo₂C layer on thermal stability of Si/SiO₂/Ti/Cu system

摘要

The effect of introducing a thin Mo₂C (30 nm) layer between Ti and Cu on the thermal stability of Si/SiO₂/Ti/Cu system was studied using four-point probe (FPP), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDAX) and X-ray diffraction (XRD) techniques. The measured value of the sheet resistance in the bi-layered diffusion barrier structure does not show any change up to an annealing temperature of 750°C. The sheet resistance when measured after annealing at 800°C marginally increases but less than twice its value at room temperature. The XRD analysis indicated no copper diffusion and the formation of Cu₃Si phase up to 800°C. The bi-layered barrier structure annealed at elevated temperature shows copper-depleted and agglomerated regions. The sheet resistance measurement, study of surface morphology and the XRD analysis confirm that the insertion of thin Mo₂C layer increases the thermal stability of the system from 400°C to 750°C. The increased thermal stability of the system is ascribed to longer diffusion path length in the bi-layered system probably because of grain boundaries mismatch at Ti-Mo₂C interface.