A Novel Analysis Method for Plasma Light and Soft X-ray Tomography Data Including the Three-Dimensional Diffusion in a Semiconductor Detector Array

摘要

The three dimensional diffusion effect in a semiconductor photon detector is directly demonstrated using a spatially distributed charge profile produced by a monochromatic energy beam in a multichannel semiconductor detector. When we substitute the value of the diffusion length obtained by the data on the charge profile and the depletion layer thickness from the data on its capacitance vs applied voltages into our theoretical formula, then the photon energy response data are well fitted by the theory. The effect of this diffusion on the plasma VUV and X-ray data is also demonstrated for obtaining actual plasma data.