首页> 外文期刊>The Astrophysical journal >METALLICITY OF THE INTERGALACTIC MEDIUM USING PIXEL STATISTICS. Ⅲ. SILICON
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METALLICITY OF THE INTERGALACTIC MEDIUM USING PIXEL STATISTICS. Ⅲ. SILICON

机译:使用象素统计的星际介质的金属性。 Ⅲ。硅

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摘要

We study the abundance of silicon in the intergalactic medium by analyzing the statistics of Si Ⅳ, C Ⅳ, and H Ⅰ pixel optical depths in a sample of 19 high-quality quasar absorption spectra, which we compare with realistic spectra drawn from a hydrodynamical simulation. Simulations with a constant and uniform Si/C ratio, a C distribution as derived in Paper Ⅱ of this series, and a UV background (UVB) model from Haardt & Madau reproduce the observed trends in the ratio of Si Ⅳ and C Ⅳ optical depths, τ_(Si Ⅳ)/τ_(C Ⅳ). The ratio τ_(Si Ⅳ)/τ_(C Ⅳ) depends strongly on τ_(C Ⅳ), but it is nearly independent of redshift for fixed τ_(C Ⅳ) and is inconsistent with a sharp change in the hardness of the UVB at z ≈ 3. Scaling the simulated optical depth ratios gives a measurement of the global Si/C ratio (using our fiducial UVB, which includes both galaxy and quasar contributions) of [Si/C] = 0.77+-0.05, with a possible systematic error of ~0.1 dex. The inferred [Si/C] depends on the shape of the UVB (harder backgrounds leading to higher [Si/C]), ranging from [Si/C] approx= 1.5 for a quasar-only UVB to [Si/C] approx= 0.25 for a UVB including both galaxies and artificial softening; this provides the dominant uncertainty in the overall [Si/C]. Examination of the full τ_(Si Ⅳ)/τ_(C Ⅳ) distribution yields no evidence for inhomogeneity in [Si/C] and constrains the width of a lognormal probability distribution in [Si/C] to be much smaller than that of [C/H]; this implies a common origin for Si and C. Since the inferred [Si/C] depends on the UVB shape, this also suggests that inhomogeneities in the hardness of the UVB are small. There is no evidence for evolution in [Si/C]. Variation in the inferred [Si/C] with density depends on the UVB and rules out the quasar-only model unless [Si/C] increases sharply at low density. Comparisons with low-metallicity halo stars and nucleosynthetic yields suggest either that our fiducial UVB is too hard or that super-massive Population Ⅲ stars might have to be included. The inferred [Si/C], if extrapolated to low density, corresponds to a contribution to the cosmic Si abundance of [Si/H] = -2.0, or Ω_(Si) approx=3.2 x 10~7, a significant fraction of all Si production expected by z ≈ 3.
机译:我们通过分析19个高质量类星体吸收光谱样本中的SiⅣ,CⅣ和HⅠ像素光学深度的统计数据,研究了星际介质中硅的丰度,并与流体动力学模拟得出的真实光谱进行了比较。 。使用恒定且均匀的Si / C比,该系列论文Ⅱ中得出的C分布以及Haardt&Madau的UV背景(UVB)模型进行的模拟,再现了观察到的SiⅣ和CⅣ光学深度比的趋势。 ,τ_(SiⅣ)/τ_(CⅣ)。比率τ_(SiⅣ)/τ_(CⅣ)强烈依赖于τ_(CⅣ),但对于固定的τ_(CⅣ)几乎与红移无关,并且与UVB的硬度在急剧变化时不一致。 z≈3。按比例缩放模拟的光学深度比可得出[Si / C] = 0.77 + -0.05的整体Si / C比(使用我们的基准UVB,其中包括星系和类星体的贡献)的测量结果。误差〜0.1 dex。推断的[Si / C]取决于UVB的形状(较硬的背景导致较高的[Si / C]),范围从[Si / C]大约等于1.5(仅用于类星体UVB)到[Si / C]大约对于包括星系和人工软化的UVB,其值为0.25;这在总体[Si / C]中提供了主要的不确定性。检验完整的τ_(SiⅣ)/τ_(CⅣ)分布没有发现[Si / C]不均匀的证据,并且限制了[Si / C]中对数正态概率分布的宽度比[[Si / C]]小得多。 C / H];这暗示了Si和C的共同起源。由于推断的[Si / C]取决于UVB形状,因此这也表明UVB硬度的不均匀性很小。 [Si / C]中没有证据表明有进化。推断的[Si / C]随密度的变化取决于UVB,除非[Si / C]在低密度下急剧增加,否则排除类星体模型。与低金属晕星和核合成产率的比较表明,我们的基准UVB太硬,或者可能必须包括超大质量Ⅲ类恒星。如果推断出[Si / C],如果将其推断为低密度,则对应于[Si / H] = -2.0对宇宙Si丰度的贡献,或Ω_(Si)大约= 3.2 x 10〜7,是z≈3预期的所有Si产量

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