首页> 外文期刊>The Astrophysical journal >Electron Densities in the Solar Polar Coronal Holes from Density-Sensitive Line Ratios of SiⅧ and S Ⅹ
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Electron Densities in the Solar Polar Coronal Holes from Density-Sensitive Line Ratios of SiⅧ and S Ⅹ

机译:从SiⅧ和SⅩ的密度敏感线比的太阳极冕孔中的电子密度

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摘要

We derive electron densities as a function of height in the north and south polar coronal holes from a forbidden spectral line ratio of Si VIII. Si VIII is produced at about 8 * 10~5 K in ionization equilibrium. We also derive densities from a similar line ratio of S X (1.3 * 10~6 K). The spectra were obtained with the Solar Ultraviolet Measurements of Emitted Radiation spectrometer flown on the Solar and Heliospheric Observatory spacecraft. In addition to the primary mechanism of electron impact excitation, the derivation of theoretical level populations for Si VIII and S X includes both proton and resonance capture excitation.
机译:我们从Si VIII的禁止谱线比得出电子密度与北极和南极冠状孔中高度的函数。 Si VIII在约8 * 10〜5 K的电离平衡状态下产生。我们还从相似的线比S X(1.3 * 10〜6 K)得出密度。光谱是通过在太阳和日球天文台航天器上飞行的太阳紫外线发射光谱仪获得的。除了电子碰撞激发的主要机理外,Si VIII和S X的理论能级总体推导还包括质子激发和共振捕获激发。

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