40nm Process Technology Yields First DRAM Chip, Module

摘要

Samsung Electronics Co., Ltd. has developed a l G-bit double-data rate 2 (DDR2) component and a 1 GB capacity, 800Mbps DDR2 small outline DRAM inline memory module (SODIMM) using 40nm generation technology, which is expected to drive further reductions in voltage against 50nm-class device, and translates to 50 percent power savings. The finer DRAM node also delivers 60 percent increase in productivity over 50nm process. The migration to 40nm-class process technology is expected to accelerate the time-to-market cycle by 50 percent to just one year.