首页> 外文期刊>Arabian Journal for Science and Engineering. Section A, Sciences >A Study on the Electrochemical Synthesis and Characterization of CuInSe_2
【24h】

A Study on the Electrochemical Synthesis and Characterization of CuInSe_2

机译:CUINSE_2电化学合成与表征的研究

获取原文
获取原文并翻译 | 示例
       

摘要

Solar cells based on Cu(In,Ga)Se_2 alloys as the absorber layer continue to attract attention in research and industry. In orderto reduce production costs, several deposition techniques have been employed, one of which is the electrochemical way.The paper reports on the synthesis in a single bath of low cost electrochemically thin films of the ternary semiconductorcompound CuInSe2 without the need to post-annealing treatments. We have studied the optimal parameters required forthe electrodeposition of thin films on both molybdenum-coated glass (Mo) and silicon wafer substrates (Si). Metals salts ofCuCl_2, InCl_3 and SeCl_4 without added complexing agent were used to prepare close to stoichiometric composition of thechalcopyrite compound CuInSe_2. Thin films were electrodeposited at two imposed potentials − 0.4 and − 1 V/SCE. In additionto the electrochemical characterization methods, we have characterized our films using the X-ray diffraction technique(XRD), scanning electron microscope (SEM) and atomic force microscopy (AFM). The results indicate that the best filmsin terms of elemental composition, structure, crystallite size and morphology have been obtained with the imposed potentialof − 1 V/SCE.
机译:基于Cu(In,Ga)Se_2合金作为吸收层的太阳能电池继续吸引研究和工业中的注意。为了为了降低生产成本,已经采用了几种沉积技术,其中一个是电化学方式。本文报告了单浴中三元半导体的低成本电化学薄膜的合成复合CuinSe2而不需要进行退火处理。我们研究了所需的最佳参数钼涂层玻璃(MO)和硅晶片基材(Si)上的薄膜电沉积。金属盐没有添加络合剂的CuCl_2,Cont_3和Secl_4用于准备近于化学计量的组成黄铜矿复合Cuinse_2。在两个施加的电位下电沉积薄膜 - 0.4和-1 v / sce。此外对于电化学表征方法,我们使用X射线衍射技术表征了我们的薄膜(XRD),扫描电子显微镜(SEM)和原子力显微镜(AFM)。结果表明最好的电影就元素组合物,结构,微晶尺寸和形态具有施加的潜力而获得ION - 1 V / SCE。

著录项

  • 来源
  • 作者单位

    Laboratoire Croissance et Caracterisation de NouveauxSemiconducteurs (LCCNS) Universite Ferhat Abbas Setif 1 Setif Algeria;

    Laboratoire Croissance et Caracterisation de NouveauxSemiconducteurs (LCCNS) Universite Ferhat Abbas Setif 1 Setif Algeria;

    Laboratoire Croissance et Caracterisation de NouveauxSemiconducteurs (LCCNS) Universite Ferhat Abbas Setif 1 Setif Algeria;

    Laboratoire Systemes Intelligents (LSI). Departementd’Electronique Faculte de Technologie Universite FerhatAbbas Setif 1 19000 Setif Algeria;

    Laboratoire Croissance et Caracterisation de NouveauxSemiconducteurs (LCCNS) Universite Ferhat Abbas Setif 1 Setif Algeria;

    Laboratoire Croissance et Caracterisation de NouveauxSemiconducteurs (LCCNS) Universite Ferhat Abbas Setif 1 Setif Algeria;

  • 收录信息 美国《科学引文索引》(SCI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CuInSe_2; Thin films; Electrodeposition; Voltammetry; XRD; AFM;

    机译:Cuinse_2;薄膜;电沉积;伏安;XRD;AFM;
  • 入库时间 2022-08-18 21:04:46

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号