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Electrochemical Properties of AZ80 Mg Alloy in Phosphate Buffer Solutions

机译:AZ80mg合金在磷酸盐缓冲溶液中的电化学性能

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In this work, passive behaviour and semiconducting properties of AZ80 Mg alloy in phosphate buffer solutions of various pH values ranging from 10.69 to 13.05 were studied. Corrosion and passive current densities measured from potentiodynamic polarization plots, defect density drawn from Mott-Schottky analysis, and finally the resistance and capacitance of the passive films estimated from electrochemical impedance spectroscopy (EIS) were all determined. Potentiodynamic polarization results indicated that increasing pH led to decrease both corrosion and passive current densities. Mott-Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics and the donor densities increased with increasing the pH from 10.69 to 13.05. EIS results showed that the thickness of the passive film increased with increasing the pH. In conclusion, increasing pH values offered better conditions for a thicker passive film formation on AZ80 Mg alloy in phosphate buffer solutions with higher protection behaviour.
机译:在这项工作中,研究了10.69至13.05的磷酸盐缓冲溶液中AZ80mg合金的无源行为和半导体性能。从电位动力学偏振图测量的腐蚀和被动电流密度,从Mott-Schottky分析中汲取的缺陷密度,最后确定了从电化学阻抗谱(EIS)估计的无源膜的电阻和电容。电位动力学偏振结果表明,增加pH导致降低腐蚀和被动电流密度。 Mott-Schottky分析显示,无源膜显示N型半导体特性,供体密度随着从10.69至13.05的增加而增加。 EIS结果表明,随着pH值的增加,被动膜的厚度增加。总之,提高pH值为具有更高保护行为的磷酸盐缓冲溶液中AZ80mg合金的较厚被动膜形成提供更好的条件。

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