Hole injection of quantum dot light-emitting diodes facilitated by multilayered hole transport layer

摘要

We report a multilayered hole transport layer (HTL) structure to improve the efficiencies and lifetimes of quantum dot light-emitting diodes (QD-LEDs). The HTL structure was constructed by inserting molybdenum trioxide (MoO3) into an organic monolayer to enhance its hole conductivity. We then investigated the effects of the multilayered HTL on the performance and operating lifetimes of QD-LEDs. QD-LEDs with optimal HTL exhibit power efficiency, external quantum efficiency, and lifetime (T-80) of 10.19 lm/W, 9.66%, and 336 h, respectively. Compared to the monolayer structure, the lifetime of the multilayered HTL was enhanced by a factor of 15. This novel architecture for QD-LEDs with multilayered HTL offers a new design strategy for next-generation high-efficiency QLED displays and solid-state lighting technologies.