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机译:无定形-SIO_2 / SI界面中缺陷的第一原理研究
Nankai Univ Coll Elect Informat & Opt Engn Tianjin 300071 Peoples R China;
Nankai Univ Coll Elect Informat & Opt Engn Tianjin 300071 Peoples R China|Eindhoven Univ Technol Ctr Computat Energy Res Dept Appl Phys NL-5600 MB Eindhoven Netherlands;
Nankai Univ Coll Elect Informat & Opt Engn Tianjin 300071 Peoples R China;
Nankai Univ Coll Elect Informat & Opt Engn Tianjin 300071 Peoples R China;
China Acad Engn Phys Microsyst & Terahertz Res Ctr Chengdu 610200 Sichuan Peoples R China|China Acad Engn Phys Inst Elect Engn Mianyang 621999 Sichuan Peoples R China;
China Acad Engn Phys Microsyst & Terahertz Res Ctr Chengdu 610200 Sichuan Peoples R China|China Acad Engn Phys Inst Elect Engn Mianyang 621999 Sichuan Peoples R China;
Nankai Univ Coll Elect Informat & Opt Engn Tianjin 300071 Peoples R China|Nankai Univ Municipal Key Lab Photoelect Thin Film Devices & Tianjin 300071 Peoples R China;
Amorphous-SiO2/Si interface; Interfacial defect; First-principles calculation; Electron paramagnetic resonance; Density of states; Charge transition level;
机译:SiC / SiO_2界面附近C = C缺陷的第一性原理研究:双键饱和引起的钝化缺陷
机译:Si / SiO2界面电子结构的第一性原理研究—界面缺陷对局部电荷密度的影响
机译:Si / SiO_2界面电子结构的第一性原理研究-界面缺陷对局部电荷密度的影响
机译:4H-SiC / SiO
机译:第一性原理研究声子在二维材料中的传输以及声子在硅化镁/锡化镁界面上的传输。
机译:半相干界面点缺陷的第一性原理研究
机译:低界面缺陷密度证据的第一性原理研究 Ge / GeO $ _2 $接口