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机译:空气固体界面上的异膜生长:极性无机基材上的非极性有机分子之间的大匹配耐受性
Terahertz Technology Innovation Research Institute Shanghai Key Laboratory of Modem Optical System Terahertz Science Cooperative Innovation Center University of Shanghai for Science and Technology 516 Jungong Road Shanghai 200093 China;
School of Chemistry and Life Sciences Chifeng University 1 Yingbin Road Hongshan District Chifeng 024000 China Key Laboratory of Oral Medicine Guangzhou Institute of Oral Disease Stomatology Hospital Department of Biomedical Engineering School of Basic Medical Sciences Guangzhou Medical University Guangzhou 511436 China;
Terahertz Technology Innovation Research Institute Shanghai Key Laboratory of Modem Optical System Terahertz Science Cooperative Innovation Center University of Shanghai for Science and Technology 516 Jungong Road Shanghai 200093 China;
Terahertz Technology Innovation Research Institute Shanghai Key Laboratory of Modem Optical System Terahertz Science Cooperative Innovation Center University of Shanghai for Science and Technology 516 Jungong Road Shanghai 200093 China;
Terahertz Technology Innovation Research Institute Shanghai Key Laboratory of Modem Optical System Terahertz Science Cooperative Innovation Center University of Shanghai for Science and Technology 516 Jungong Road Shanghai 200093 China Key Laboratory of Oral Medicine Guangzhou Institute of Oral Disease Stomatology Hospital Department of Biomedical Engineering School of Basic Medical Sciences Guangzhou Medical University Guangzhou 511436 China Biomedical Nanocenter School of Life Science Inner Mongolia Agricultural University 29 EastErdos Street Hohhot 010011 China;
Crystal nanostructure; Heteroepitaxial growth; Paraffin; Self-assembled membrane; Physical vapor deposition;
机译:了解分子在晶体基质上的有机-无机异质外延生长:实验和理论
机译:金属有机界面对极性和非极性分子自组装单分子膜上溅射的坡莫合金(Fe:Ni)薄膜生长机理和磁性的影响
机译:研究有机和无机土壤成分在吸附极性和非极性芳族化合物中的作用
机译:3C-SiC在6H-SIC底板上,TEM调查的杂交生长
机译:无机晶体在有机-无机界面的成核和生长。
机译:哺乳动物血红素过氧化物酶中无机底物优先顺序的结构证据:乳过氧化物酶与四种无机底物SCN-I-Br-和Cl-的复合物的晶体结构
机译:溶液和聚合物膜中极性和非极性有机分子的电吸收光谱的比较研究
机译:极性/非极性半导体异质结构的分子束外延生长和器件电位