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首页> 外文期刊>Applied Surface Science >Significantly enhanced photocurrent density in NiCo_2O_4/a-C/Si photoanode for water splitting
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Significantly enhanced photocurrent density in NiCo_2O_4/a-C/Si photoanode for water splitting

机译:显着提高了Nico_2O_4 / A-C / Si PhotoNode的光电流密度用于水分裂

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摘要

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. In this work, amorphous carbon films (a-C), NiCo2O4 (NCO) and NCO/a-C bilayer films as protective layers were prepared on the surface of silicon, respectively. By comparing these protective layers of Si photoanode, we find that the NCO film can effectively protect Si from corrosion. It can not only lower initial potential but also increase photocurrent density. The NCO films were found to have the best catalytic performance. The photocurrent density of the NCO (60 nm)/Si photoanode is 185.6 mA/cm(2) and that of the NCO (60 nm)/a-C (14 nm)/Si photoanode reaches high to 586.4 mA/cm(2) at a voltage of 6 V vs SCE. The carbon interlayer reduces the width of depletion region built with n-Si, which further improves the current density of the NCO/Si photoanode. The photocurrent density of the NCO/a-C/Si photo-anode is more than three times higher than that of the NCO/Si photoanode. The NCO/a-C bilayer film is an ideal protective layer of Si photoanode for photochemical water decomposition.
机译:实现用作太阳能水分裂装置的组件的光电池稳定运行对于实现这种可再生能源技术的承诺至关重要。在该工作中,在硅表面上,在硅表面上制备非晶碳膜(A-C),NicO 2 O 4(NCO)和NCO / A-C双层膜作为保护层。通过比较这些Si PhotoNode的保护层,我们发现NCO薄膜可以有效地保护SI免受腐蚀。它不仅可以降低初始潜力,而且可以提高光电流密度。发现NCO薄膜具有最佳的催化性能。 NCO(60nm)/ Si PhotoNode的光电流密度为185.6 mA / cm(2),NCO(60nm)/ AC(14nm)/ Si PhotoNode的光电流密度高达586.4 mA / cm(2)电压为6 V VS SCE。碳中间层减少了用N-Si构建的耗尽区的宽度,这进一步提高了NCO / Si Photanode的电流密度。 NCO / A-C / Si光阳极的光电流密度比NCO / Si PhotoNode的光电流密度高度高度高。 NCO / A-C双层膜是光化学水分解的Si PhotoNode的理想保护层。

著录项

  • 来源
    《Applied Surface Science》 |2020年第1期|147155.1-147155.7|共7页
  • 作者单位

    Hebei Normal Univ Coll Phys Shijiazhuang 050024 Hebei Peoples R China|Hebei Normal Univ Hebei Adv Thin Film Lab Shijiazhuang 050024 Hebei Peoples R China;

    Hebei Normal Univ Coll Phys Shijiazhuang 050024 Hebei Peoples R China|Hebei Normal Univ Hebei Adv Thin Film Lab Shijiazhuang 050024 Hebei Peoples R China;

    Yantai Univ Sch Optoelect Informat Sci & Technol Yantai 264005 Shandong Peoples R China;

    Yantai Univ Sch Optoelect Informat Sci & Technol Yantai 264005 Shandong Peoples R China;

    Hebei Normal Univ Coll Phys Shijiazhuang 050024 Hebei Peoples R China|Hebei Normal Univ Hebei Adv Thin Film Lab Shijiazhuang 050024 Hebei Peoples R China;

    Hebei Normal Univ Coll Phys Shijiazhuang 050024 Hebei Peoples R China|Hebei Normal Univ Hebei Adv Thin Film Lab Shijiazhuang 050024 Hebei Peoples R China;

    Hebei Normal Univ Coll Phys Shijiazhuang 050024 Hebei Peoples R China|Hebei Normal Univ Hebei Adv Thin Film Lab Shijiazhuang 050024 Hebei Peoples R China;

    Hebei Normal Univ Coll Phys Shijiazhuang 050024 Hebei Peoples R China|Hebei Normal Univ Hebei Adv Thin Film Lab Shijiazhuang 050024 Hebei Peoples R China;

    Hebei Normal Univ Coll Phys Shijiazhuang 050024 Hebei Peoples R China|Hebei Normal Univ Hebei Adv Thin Film Lab Shijiazhuang 050024 Hebei Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photochemical water decomposition; NCO/a-C/Si photoanode; Protective layer; Depletion region; Series resistance;

    机译:光化学水分解;NCO / A-C / Si PhotoNode;保护层;耗尽区;串联电阻;

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