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机译:通过优化的CH_4 / H_2比率在GE(110)基板上的单晶石墨烯的晶片规模制造
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn 19A Yuquan Rd Beijing 100049 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn 19A Yuquan Rd Beijing 100049 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn 19A Yuquan Rd Beijing 100049 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn 19A Yuquan Rd Beijing 100049 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China;
Single-crystal graphene; CH4/H-2 ratio; Wafer-scale; Terahertz time domain spectroscopy;
机译:在vicinal ge(001)衬底上的单晶石墨烯的晶片级生长
机译:扫描隧道显微镜研究Cu / Ni(111)和Ge(110)衬底上单晶石墨烯的表面结构
机译:共熔熔融盐中CO_2 / H_2O共电解生成CH_4和H_2的电解质组成的优化
机译:H_2 / CO_2混合物的氧化和氢初始浓度对CH_4和CH_4 / CO_2混合物燃烧的影响:实验和建模
机译:单层和少层石墨烯自旋阀的制造和表征导致自旋弛豫长度以及自旋电压对载流子浓度的依赖性得到优化。
机译:悬浮石墨烯纳米带阵列的晶圆级制备及其生长动力学
机译:石墨烯:高质量双层伯纳石墨烯的同步增长:从六边形单晶畴到晶圆级均匀薄膜(ADV。Funct。Matter。22/2017)