One-step fabrication of ID p-NiO nanowire-Si heterojunction: Development of self-powered ultraviolet photodetector

摘要

Even though there are reports on NiO-p/Si-n based photodetector, work along 1D NiO/Si self-powered photodetector remains unexplored. 1D materials offer better electron mobility and can provide ballistic transport channel, which helps in achieving high responsivity. In this work, direct single-step deposition of p-type NiO nanowires on n-type Si as a self-powered photodetector was successfully fabricated by engaging simple electrospinning technique. The structural properties as observed from XRD indicate highly crystalline NiO nanowires and FESEM images revealed 60-75 nm diameter with uniform distribution. Growth of nanowires by using stimuli polymer and its completely removal at high temperature was confirmed using TGA and XPS analysis. The responsivity of the fabricated photodetector was calculated to be 9.1 mA W-1 at zero bias, which can be attributed to the p-type NiO interface with the n-type Silicon, which creates an internal electrical field thereby assisting in the effective separation of the photogenerated carriers. Further, under illumination, at zero bias, the photogenerated current still exists suggesting a generation of internal voltage, which makes the fabricated device as self-powered. This fabrication method will enhance the photodetection properties, and it can be implemented in the fields of optoelectronic devices, sensors, and flexible electronics.