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首页> 外文期刊>Applied Surface Science >A general route to free-standing films of nanocrystalline molybdenum chalcogenides at a liquid/liquid interface under hydrothermal conditions
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A general route to free-standing films of nanocrystalline molybdenum chalcogenides at a liquid/liquid interface under hydrothermal conditions

机译:在水热条件下在液/液界面形成纳米晶硫属硫化物自立膜的一般途径

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摘要

The utility of hydrothermal method applied to liquid/liquid interface for obtaining free-standing films of molybdenum chalcogenides is demonstrated. A general route for obtaining films of MoO3, MoS2 and MoSe2 at a water/toluene interface is illustrated employing a universal Mo precursor and the desired chalcogenide reactant in the two different phases. The hydrothermal conditions promote the formation of emulsions of water and toluene. A mechanism is proposed wherein the in-situ chalcogenation happens at the interfaces of tiny droplets of toluene in water and the nanosheets of the chalcogenide self-assemble at the regenerated interface during quenching to form films. The free-standing films are transferred on to various substrates for characterization. MoO3 films consist of nanobelts while MoS2 and MoSe2 films consist of a dense assembly of nanosheets. The advantage of transferring the films on arbitrary substrates is exemplified for electrochemical applications.
机译:证明了将水热法应用于液/液界面以得到硫属钼化物的自支撑膜的实用性。示出了在水/甲苯界面处获得MoO 3,MoS 2和MoSe 2的膜的一般途径,该途径在两种不同相中使用通用的Mo前体和所需的硫属化物反应物。水热条件促进水和甲苯的乳液形成。提出了一种机制,其中原位硫族元素化发生在水中的甲苯小液滴的界面处,并且在淬火过程中,硫属元素化物的纳米片在再生界面处自组装在再生界面上。将自支撑膜转移到各种基材上进行表征。 MoO3薄膜由纳米带组成,而MoS2和MoSe2薄膜由纳米片的致密组件组成。对于电化学应用,示例了将膜转移到任意基材上的优点。

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