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Facile synthesis of durable perovskite quantum dots film with near unity photoluminescence quantum yield for efficient perovskite light emitting diode

机译:易于合成具有接近单位光致发光量子产率的耐用钙钛矿量子点薄膜,从而获得高效的钙钛矿发光二极管

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In this work, a bright uniform PSK QDs film is synthesized in-situ using an amorphous polymer and optimizing the stoichiometry. The in-situ formed QDs film grown in the presence of poly(vinylpyrrolidone) chains shows a photoluminescence quantum yield (PLQY) as high as 98% even under low light intensities (0.01 mW/cm(2)) with a long shelf lifetime of up to 2 years under ambient light (nanocrystals retain 100% of the initial PLQY). The near unity PLQY is due to the passivation of the surface defects of the PSK QDs by the Lewis base pyrrolidone groups of the polymer chain. Further, the QDs film shows higher thermal stability that increases by a factor of more than 5 compared to the bulk film. High efficient green perovskite light emitting diodes (PLEDs) are fabricated without electron transporting layer using the high luminescent in situ synthesized low roughness QDs film with a current efficiency of 48.18 cd/A and power efficiency of 6.88 lm/W. Such devices start emitting green light at 2.5 V and reach a maximum luminance of 124727 cd m(-2) at 7 V with external quantum efficiency of 10.5%. Further, the flexible PLED based on PSK QDs yields a maximum luminance of 43990 cd m(-2) at 7 V.
机译:在这项工作中,使用无定形聚合物并优化了化学计量比,就可以合成明亮均匀的PSK QDs薄膜。在聚(乙烯基吡咯烷酮)链存在下生长的原位形成QDs膜即使在低光强度(0.01 mW / cm(2))下仍具有很长的保质期,显示出高达98%的光致发光量子产率(PLQY)。在环境光下长达2年(纳米晶体保留了初始PLQY的100%)。接近统一的PLQY是由于聚合物链的Lewis基吡咯烷酮基团使PSK QD的表面缺陷钝化。此外,与块状薄膜相比,QDs薄膜显示出更高的热稳定性,增加了5倍以上。使用电流效率为48.18 cd / A,功率效率为6.88 lm / W的高发光原位合成低粗糙度QDs薄膜,无需电子传输层即可制造出高效的绿色钙钛矿发光二极管(PLED)。这样的设备开始以2.5 V的电压发射绿光,并在7 V的外部量子效率为10.5%的情况下达到124727 cd m(-2)的最大亮度。此外,基于PSK QD的柔性PLED在7 V电压下的最大亮度为43990 cd m(-2)。

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