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Design of a highly efficient ternary AgI/rGO/BiVO_4 nanocomposite and its direct solar light induced photocatalytic activity

机译:高效三元AgI / rGO / BiVO_4纳米复合材料的设计及其直接太阳光诱导的光催化活性

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A solar light responsive Z-scheme AgI/rGO/BiVO4 ternary nanocomposite was designed by ultrasonic assisted hydrothermal and wet impregnation methods. XPS spectra showed a gradual positive peak shift in the binding energy of Bi, after rGO and AgI incorporation, indicating chemical bonding and electrons migration pathway from BiVO4 to AgI through the rGO layer. Furthermore, Raman analysis revealed a red shift in the characteristic Raman band of BiVO4, suggesting local structural changes upon rGO and AgI loading. In addition, the band gap of the nanocomposite for bare BiVO4 was found to be shifted to 2.24 eV from 2.36 eV, therefore, increasing the overall visible light absorption. Photocurrent measurements indicated the presence of significantly high surface charge trap states in bare BiVO4. However, the detrapping process was not observed suggesting fast recombination of trapped charges on the surface of bare BiVO4. After AgI and rGO loading, the surface charge trap states of BiVO4 disappeared, which reveals the quick shuttling of charge carriers via close interface bonding in the nanocomposites. The photocatalytic performance of the nanocomposites was tested with Tetracycline (TC), a common antibiotic and RhB dye, as model pollutants. The AgI/rGO/BiVO4 nanocomposite displayed nearly 84% and 99% photocatalytic degradation for TC and RhB, respectively under direct solar light irradiation in 25 min. The Total Organic Carbon (TOC) analysis revealed more than 35% and 25% mineralization efficiency for both TC and RhB under 2 h of reaction. The AgI/rGO/BiVO4 nanocomposite exhibited not only enhanced photocatalytic activity but also high stability because of the strong chemical bonding among AgI, BiVO4, and rGO, which largely circumvented the electron-hole recombination. Based on XPS, Mott-Schottky, and reactive radical trapping experiments, a Z-scheme charge carrier separation and migration pathway in the nanocomposite is proposed.
机译:通过超声辅助水热湿法浸渍法设计了一种日光响应的Z型AgI / rGO / BiVO4三元纳米复合材料。 XPS光谱显示,rGO和AgI掺入后,Bi的结合能有一个逐渐的正峰移动,表明通过rGO层从BiVO4到AgI的化学键和电子迁移路径。此外,拉曼分析显示BiVO4的特征拉曼带发生红移,表明rGO和AgI加载后局部结构发生了变化。另外,发现用于裸BiVO 4的纳米复合材料的带隙从2.36 eV移至2.24 eV,因此,增加了整体可见光吸收。光电流测量表明裸BiVO4中存在明显较高的表面电荷陷阱态。但是,未观察到解捕集过程,表明在裸BiVO4的表面上捕获的电荷快速重组。 AgI和rGO加载后,BiVO4的表面电荷陷阱状态消失,这表明通过纳米复合物中紧密的界面键合,电荷载流子快速穿梭。用常见的抗生素四环素(TC)和RhB染料作为模型污染物测试了纳米复合材料的光催化性能。在25分钟的直接太阳光照射下,AgI / rGO / BiVO4纳米复合材料分别对TC和RhB表现出近84%和99%的光催化降解。总有机碳(TOC)分析显示,在反应2小时后,TC和RhB的矿化效率分别超过35%和25%。 AgI / rGO / BiVO4纳米复合材料不仅表现出增强的光催化活性,而且还具有很高的稳定性,因为AgI,BiVO4和rGO之间的化学键很强,从而大大避免了电子-空穴的重组。基于XPS,Mott-Schottky和反应性自由基俘获实验,提出了Z型电荷载流子在纳米复合材料中的分离和迁移途径。

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