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Physical, photochemical, and extended piezoelectric studies of orthorhombic ZnSnN_2 nanocolumn arrays

机译:斜方晶系ZnSnN_2纳米柱阵列的物理,光化学和扩展压电研究

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This study reports the piezo-related properties of ZnSnN2 (ZTN) fabricated through natural Sn3N4 and Zn thickness gradients deposited oppositely on a fluorine-doped tin oxide substrate to form Zn-Sn3N4 composition spreads to enhance the relative variation of the cation ratios and to promote the formation of orthorhombic ZTN. No moving shutter was incorporated into combinatorial magnetron sputtering to minimize fabrication complexity. The Sn3N4-rich deposition (Location 1) of the Zn-Sn3N4 composition spread exhibited Sn3N4 and the single crystallinity of orthorhombic (Pna2(1)) ZTN nanocolumn arrays, which grew along the [001] direction, confirmed by locked-coupled X-ray diffraction and transmission electron microscopy. The constituent element diffusion and variation of the atomic binding state of constituent elements along the substrate normal were tracked by depth profiling using secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. The band gap of ZTN (approximately 2.0 eV) was estimated from a UV-vis spectrum. The piezotronic and piezophototronic effects of ZTN were determined through a facile current-voltage measurement, which were explained by the Schottky barrier height variations. Piezophotocatalysis exhibited the highest rate constant (k, approximately 9 x 10(-3)/min) of the measurements, which was attributed to the reduced recombination of the photogenerated e(-) -h(+) pairs because of the piezopotential distribution. Additionally, O-center dot(2)- radicals were predominately indicated in the degradation process.
机译:这项研究报告了ZnSnN2(ZTN)的压电相关特性,该特性是通过自然地Sn3N4和Zn厚度梯度相反地沉积在掺氟的氧化锡衬底上形成Zn-Sn3N4组成扩散来增强阳离子比率的相对变化并促进的。斜方ZTN的形成。组合磁控管溅射中未结合移动百叶窗以最大程度地降低制造复杂性。 Zn-Sn3N4组成分布的富含Sn3N4的沉积(位置1)显示Sn3N4和正交晶体(Pna2(1))ZTN纳米柱阵列的单结晶度,该阵列沿[001]方向生长,通过锁定耦合X-射线衍射和透射电子显微镜。利用二次离子质谱和X射线光电子能谱通过深度剖析来追踪组成元素沿衬底法线的扩散和组成元素的原子键合状态的变化。 ZTN的带隙(大约2.0 eV)是从UV-vis光谱估计的。 ZTN的压电和压电效应是通过方便的电流-电压测量确定的,这可以通过肖特基势垒高度变化来解释。压电光催化表现出最高的速率常数(k,约为9 x 10(-3)/ min),这归因于压电势分布,减少了光生e(-)-h(+)对的重组。此外,在降解过程中主要显示O-中心点(2)-自由基。

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