Observation of localization complexes and phonons replicas in heavily doped GaAs_(1-x)N_x

摘要

We studied the photoluminescence (PL) from GaAsN with the nitrogen content of 2 x 10~(18) cm~(-3) grown by molecular beam epitaxy (MBE). The low-temperature (LT) photoluminescence spectra are composed of several features of excitons associated to nitrogen complexes and phonons replicas. These features were studied as a function of thermal annealing, growth temperatures and substrate misorientation. We have shown that these nitrogen bound-excitonic transitions are very sensitive to these parameters and could be used to study the statistical distribution of nitrogen in nominally uniform layers.