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The properties of cadmium tin oxide thin-film compounds prepared by linear combinatorial synthesis

机译:线性组合合成法制备镉锡氧化物薄膜化合物的性能

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SnO_2 and CdO films with high electrical and optical quality have been produced by using low-pressure metal-organic chemical vapor deposition. Based on the knowledge gained from binary oxide formation, linear combinatorial synthesis is used to study the ternary oxide (Cd-Sn-O) compound. Compositional, structural, electrical, and optical properties of the films are found to vary-along the reactant gas flow direction. The crystal structure indicates that the CdO-like films are formed near the location of gas injection and SnO_2-like films near the end of the deposition zone. As composition and structure change, the carrier concentration varies around 10~(20) cm~(-3), and the mobility increases from less than 1 to ~ 60 cm~2 V~(-1) s~(-1). The optical bandgap of the films also increases from ~ 2.75 to 3.65 eV as composition moves from CdO-like films to SnO_2-like films.
机译:通过使用低压金属有机化学气相沉积技术已经生产出具有高电学和光学质量的SnO_2和CdO薄膜。基于从二元氧化物形成中获得的知识,线性组合合成用于研究三元氧化物(Cd-Sn-O)化合物。发现膜的组成,结构,电和光学性质沿着反应气体的流动方向而变化。晶体结构表明,在气体注入位置附近形成了CdO-类膜,在沉积区末端附近形成了SnO_2-类膜。随着组成和结构的变化,载流子浓度在10〜(20)cm〜(-3)附近变化,迁移率从小于1增加到〜60 cm〜2 V〜(-1)s〜(-1)。随着组成从CdO类薄膜迁移到SnO_2类薄膜,薄膜的光学带隙也从〜2.75 eV增加到3.65 eV。

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