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Plasma assisted nitridation of Ti-6Al-4V

机译:等离子体辅助氮化Ti-6Al-4V

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A systematic study was undertaken with samples of Ti-6Al-4V nitrided in a unusual RF plasma equipment using a N-2-H-2 gas mixture under 10 Pa. As treatment parameters, we have used: nitriding time (from 30 to 720 min) and samples temperature (from 500 to 900 degreesC). In order to evidence the plasma efficiency, thermal treatments of nitridation, assisted or not by RF plasma, were performed in the same conditions. The nitrided titanium specimen were characterized by XRD, SEM, TEM, EELS, and microhardness measurements. The plasma is shown to enhance the formation of richer compounds like delta-TiN and epsilon-Ti2N nitrides on the surface at lower temperature than that obtained with a classic thermal treatment. Moreover, it leads to a significant reduction of the residual compressive stress. At moderate temperature (700 degreesC) and for longer treatments, the plasma treatment enables the formation of a delta-TiN layer which is thought to act as a diffusion barrier for nitrogen. Then, the underneath previously formed epsilon-Ti2N grains undergo a nitrogen rearrangement with the remaining alpha-Ti grains leading to the formation of a nitrogen poor phase that was identified as the alpha-TiN0.26 phase. (C) 2003 Elsevier B.V. All rights reserved. [References: 23]
机译:在不寻常的RF等离子设备中使用N-2-H-2气体混合物在10 Pa下氮化的Ti-6Al-4V样品进行了系统研究。作为处理参数,我们使用了:氮化时间(从30到720)分钟)和样品温度(500至900摄氏度)。为了证明等离子体效率,在相同条件下进行了氮化处理的热处理,无论是否通过RF等离子体进行。通过XRD,SEM,TEM,EELS和显微硬度测量对氮化的钛试样进行表征。已显示,与传统热处理相比,等离子体在较低的温度下可增强表面上诸如δ-TiN和ε-Ti2N氮化物之类的更丰富的化合物的形成。而且,这导致残余压缩应力的显着降低。在中等温度(700摄氏度)和更长的处理时间下,等离子处理可以形成δ-TiN层,该层被认为是氮的扩散阻挡层。然后,在下面形成的先前的ε-Ti2N晶粒进行氮重排,其余的α-Ti晶粒导致形成贫氮相,该相被确定为α-TiN0.26相。 (C)2003 Elsevier B.V.保留所有权利。 [参考:23]

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