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Thermionic contrast between the mean work functions effective for thermal positive-ionic and electronic emissions from polycrystalline tungsten surfaces heated in vacuum: comparison between theory and experiment

机译:在真空中加热的多晶钨表面产生的热正离子和电子发射的平均功函数之间的热电子对比度:理论与实验之间的比较

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摘要

To study the thermionic contrast of polycrystalline surfaces consisting of many patchy faces with different local work functions, those mean work functions (φ~+ and φ~e) effective for thermal positive-ionic and electronic emissions from a polycrystalline tungsten surface heated in a high vacuum were measured as a function of surface temperature and found to be 5.18 ± 0.02 and 4.60 ± 0.02 eV, respectively, in a temperature range (approx > 2000 K) high enough to keep the surface virtually clean. Consequently, the thermionic contrast (Δφ~* ≡ φ~+-φ~e) was determined experimentally to be 0.58 ± 0.03 eV. They are in good agreement with literature values (φ~+ = 5.11 ± 0.04 eV, φ~e = 4.59 ± 0.01 eV and Δφ~* = 0.52 ± 0.04 eV) reported with essentially clean surfaces of polycrystalline tungsten. By using those data on both local work function and fractional area reported with patchy faces of polycrystalline tungsten, φ~+ and φ~e at 2000—2300 K are theoretically evaluated to be 5.15 ± 0.03 and 4.63 ± 0.01 eV, respectively, thereby yielding Δφ~* = 0.52 ± 0.03 eV. Each of these theoretical values agrees well with each of the experimental ones within the errors of ±0.04 eV. In addition, Δφ~* = 0 deduced theoretically with monocrystalline tungsten consists with literature values (from —0.05 to 0.06 eV, affording 0.01 ± 0.04 eV as average) determined experimentally by several groups of workers. These results lead to the conclusion that the thermionic contrast for polycrystalline tungsten is 0.54 ± 0.04 eV in contrast to Δφ~* = 0 for monocrystalline tungsten.
机译:为了研究由许多具有不同局部功函数的斑片面组成的多晶表面的热电子对比度,这些平均功函数(φ〜+和φ〜e)对于在高温下加热的多晶钨表面产生的热正离子和电子发射有效测量真空度是表面温度的函数,在足够高的温度范围内(约> 2000 K),真空度分别为5.18±0.02和4.60±0.02 eV。因此,通过实验确定热电子对比度(Δφ〜*φφ++φe)为0.58±0.03eV。它们与基本清洁的多晶钨表面报道的文献值(φ〜+ = 5.11±0.04 eV,φ〜e = 4.59±0.01 eV和Δφ〜* = 0.52±0.04 eV)非常吻合。通过使用局部功函数和多晶钨片状面报告的分数区域的数据,理论上估计2000-2300 K处的φ〜+和φ〜e分别为5.15±0.03和4.63±0.01 eV,从而得出Δφ〜* = 0.52±0.03 eV。这些理论值中的每一个与每个实验值都很好地吻合,误差在±0.04 eV之内。此外,单晶钨在理论上推导的Δφ〜* = 0由几组工人实验确定的文献值(从-0.05到0.06 eV,平均为0.01±0.04 eV)。这些结果得出结论,多晶钨的热电子对比度为0.54±0.04 eV,而单晶钨的Δφ〜* = 0。

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