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Influence of hydrogen and oxygen plasma treatment on field emission characteristics of boron nitride thin films

机译:氢氧等离子体处理对氮化硼薄膜场发射特性的影响

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摘要

Boron nitride (BN) nanometer films are synthesized on Si(1 0 0) substrates by RF reactive magnetron sputtering. The surfaces of BN films are treated with hydrogen and oxygen plasma, respectively and studied by Fourier transform infrared (FTIR) spectra. atomic force microscopic (AFM) and field emission characteristics. The results show that the surface negative electron affinity (NEA) of the films is increased, the threshold field reduced and the emission current increased due to hydrogen plasma treatment. The effect of oxygen plasma treatment on field emission characteristics of BN films is obscure. The result shows that only the emission current is slightly decreased due to the surface oxidation of BN films. (C) 2004 Elsevier B.V. All rights reserved.
机译:通过射频反应磁控溅射在Si(1 0 0)衬底上合成了氮化硼(BN)纳米膜。 BN膜的表面分别用氢和氧等离子体处理,并通过傅立叶变换红外(FTIR)光谱进行研究。原子力显微镜(AFM)和场发射特性。结果表明,由于氢等离子体处理,膜的表面负电子亲和力(NEA)增加,阈值场减小并且发射电流增加。氧等离子体处理对BN薄膜场发射特性的影响是模糊的。结果表明,由于BN膜的表面氧化,仅发射电流略有降低。 (C)2004 Elsevier B.V.保留所有权利。

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