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Influence of post-annealing treatment on the structure properties of ZnO films

机译:后退火处理对ZnO薄膜结构性能的影响

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Highly oriented polycrystalline ZnO films were deposited on Si substrate by rf reactive sputtering technique. X-ray diffraction (XRD), atomic force microscope (AFM) and the refractive index were employed to analyze the influence of the post-annealing treatment on the structural properties of ZnO thin films. It has been found that the grain size of ZnO thin films increases with increasing the annealing temperature, the shift of the diffraction peak position from its normal powder value was observed. AFM analysis shows that the surface roughness of ZnO films is very low at temperature between 250 and 600℃. The packing density investigation shows ZnO films can obtain high packing densities (above 0.973) in the annealing temperature rang from 450 to 600℃.
机译:通过射频反应溅射技术在硅衬底上沉积了高取向多晶ZnO薄膜。利用X射线衍射(XRD),原子力显微镜(AFM)和折射率分析了退火后处理对ZnO薄膜结构性能的影响。已经发现,ZnO薄膜的晶粒尺寸随着退火温度的升高而增加,观察到衍射峰位置偏离其正常粉末值。 AFM分析表明,ZnO薄膜的表面粗糙度在250至600℃之间非常低。堆积密度的研究表明,ZnO薄膜在450至600℃的退火温度下可以获得较高的堆积密度(高于0.973)。

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