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首页> 外文期刊>Applied Surface Science >Influence of charged particle bombardment and sputtering parameters on the properties of HfO2 films prepared by dc reactive magnetron sputtering
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Influence of charged particle bombardment and sputtering parameters on the properties of HfO2 films prepared by dc reactive magnetron sputtering

机译:带电粒子轰击和溅射参数对直流反应磁控溅射制备的HfO2薄膜性能的影响

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摘要

HfO2 films prepared on glass substrates by dc reactive magnetron sputtering in an Ar + O-2 atmosphere are investigated. The films are polycrystallized with a pure monoclinic phase, and the crystallization strongly relates to the technology environment. Charged particle bombardment mainly caused by negative oxygen ions during sputtering on the films results in rougher surface morphology and worse crystalline property. Influence of sputtering pressure, substrate temperature and ArO2 flow ratio is studied. The main orientations of the films are (-111) and (111). The (-111) orientation is stable, but (111) orientation is very sensitive to the sputtering condition, and it can be suppressed effectively by introducing charged particle bombardment, lowing sputtering pressure and increasing oxygen concentration. (c) 2006 Elsevier B.V. All rights reserved.
机译:研究了在Ar + O-2气氛中通过直流反应磁控溅射在玻璃基板上制备的HfO2膜。膜是用纯单斜晶相多晶化的,其结晶与技术环境密切相关。带电粒子轰击主要是由薄膜上的溅射过程中的负氧离子引起的,导致较粗糙的表面形态和较差的结晶性能。研究了溅射压力,衬底温度和ArO2流量比的影响。膜的主要取向是(-111)和(111)。 (-111)取向是稳定的,但是(111)取向对溅射条件非常敏感,并且可以通过引入带电粒子轰击,降低溅射压力和增加氧浓度来有效地抑制它。 (c)2006 Elsevier B.V.保留所有权利。

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