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Sputtering yields of PMMA films bombarded by keV C60+ ions

机译:keV C60 +离子轰击的PMMA膜的溅射产量

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A quartz crystal microbalance (QCM) has been used to determine total-mass sputtering yields of PMMA films by 1-16 keV C60(+,2+) ion beams. Quantitative sputtering yields for PMMA are presented as mass loss per incident ion Y-m. Mass-lost rate QCM data show that a 13 keV C-60 cluster leads to emission equivalent to 800 PMMA molecules per ion. The power law obtained for the increase in sputtering yield with primary ion energy is in good agreement those predicted by "thermal spike" regime and MD models, when crater sizes are used to estimate sputtering. (c) 2006 Elsevier B.V. All rights reserved.
机译:石英晶体微量天平(QCM)已用于通过1-16 keV C60(+,2+)离子束确定PMMA膜的总质量溅射率。 PMMA的定量溅射产率表示为每入射离子Y-m的质量损失。质量损失率QCM数据显示,一个13 keV C-60簇导致每个离子发射相当于800个PMMA分子。当使用陨石坑大小估算溅射时,随着一次离子能量的增加,溅射产率提高的功率定律与“热尖峰”状态和MD模型所预测的功率定律完全吻合。 (c)2006 Elsevier B.V.保留所有权利。

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