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High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions

机译:来自被大Ar团簇离子轰击的硅靶的高强度Si团簇离子发射

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摘要

Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/cluster. Si-n(+) ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size. (c) 2006 Published by Elsevier B.V.
机译:在大的Ar团簇和单体离子轰击下,用四极质谱仪测量了从Si靶发射的次级离子。使用能量为7.5至25 keV的入射离子束,且Ar簇离子的平均大小约为1000个原子/簇。在Ar簇离子轰击下检测到n值高达n = 8的Si-n(+)离子,而在Ar单体离子轰击下几乎检测不到Si簇离子。这些簇离子的产率显示出幂律对簇尺寸的依赖性。 (c)2006年由Elsevier B.V.发布

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