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Scanning probe microscopy studies of PbS surfaces oxidized in air and etched in aqueous acid solutions

机译:在空气中氧化并在酸性水溶液中蚀刻的PbS表面的扫描探针显微镜研究

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Natural n-type PbS single crystals have been studied using AFM, STM and STS after long-term oxidation in air at ambient temperatures and extensive etching in aqueous acid solutions, in contrast to previous work devoted to initial corrosion of fresh surfaces. The exposure of PbS to atmosphere at high relative humidity for several days yields widespread loose oxidation products; the process is much slower at low humidity. Surface morphologies diverge after the treatment in I M perchloric and hydrochloric acid solutions at room temperature and become widely different at elevated temperatures, displaying commonly etch pits up to several micrometers in size and depth along with rather uniformly distributed 20-100 nm protrusions of PbS phase. The changes both in topography and semiconducting properties of PbS found by tunneling spectroscopy have been explained in terms of the non-uniform distribution of donor- and acceptor-type defects D+/D- in the metal depleted surface layer, which are generated by chemical reactions and, in turn, determine the rates of the PbS corrosion. In particular, the D- centers exhibit a self-catalyzing effect on the non-oxidative local dissolution of PbS in HCl media, resulting in the deep etch pits. (c) 2005 Elsevier B.V. All rights reserved.
机译:与以前致力于新鲜表面初始腐蚀的工作相反,在环境温度下在空气中长期氧化并在酸水溶液中进行广泛蚀刻之后,已经使用AFM,STM和STS研究了天然n型PbS单晶。 PbS在高相对湿度下暴露于大气中数天会产生广泛的疏松氧化产物。在低湿度下,该过程要慢得多。在室温下在1M高氯酸和盐酸溶液中处理后,表面形态会发生变化,并且在升高的温度下表面形态会发生很大变化,通常会显示出尺寸和深度达数微米的蚀刻凹坑,以及PbS相的20-100 nm突起分布相当均匀。通过隧穿光谱法发现的PbS的形貌和半导体性质的变化已通过化学反应产生的金属贫化的表面层中供体型和受体型缺陷D + / D-的不均匀分布进行了解释然后确定PbS腐蚀的速率。特别地,D中心对PbS在HCl介质中的非氧化性局部溶解表现出自催化作用,从而导致深腐蚀坑。 (c)2005 Elsevier B.V.保留所有权利。

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