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Improved electrical and optical properties of MEH-PPV light emitting diodes using Ba buffer layer and porphyrin

机译:使用Ba缓冲层和卟啉改善了MEH-PPV发光二极管的电学和光学性能

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It has been found that insertion of a thin Bit buffer layer between the At electrode and the MEH-PPV layer results in a significantly higher current density in ITO/MEH-PPV/Al polymer light-emitting diodes due to it reduction of the potential barrier at the cathode-polymer interface. The photoluminescence is found to increase with the addition of porphyrin-containing platinum as the central atom, showing that some of the triplet excitons decay radiatively as a result of mixing porphyrin. (c) 2005 Elsevier B.V. All rights reserved.
机译:已经发现,在At电极和MEH-PPV层之间插入薄的位缓冲层会导致ITO / MEH-PPV / Al聚合物发光二极管中的电流密度显着提高,这是因为它降低了势垒在阴极-聚合物界面。发现通过添加含卟啉的铂作为中心原子,光致发光增加,这表明由于混合了卟啉,某些三重态激子辐射地衰减。 (c)2005 Elsevier B.V.保留所有权利。

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