Oxygen Flooding And Sample Cooling During Depth Profiling Of Hfsion Thin Films

摘要

A combination of oxygen flooding and. Cs primary ion bombardment can suppress the enhancement of the secondary ion signal at the surface and at the interface of a thin HfSiON layer on a Si substrate. The surface concentration of both Cs and 0 during Cs primary ion bombardment with oxygen flooding was higher than that without oxygen flooding, as confirmed by X-ray photoelectron spectroscopy. When the sample was cooled to about -150 ℃, the enhancement of the secondary ion signal could be suppressed at a lower oxygen pressure.