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Oxygen O18 Method And The Search For The Ionization Mechanism In Sputtering Of Oxygenated Surfaces

机译:O18氧法及氧表面溅射中电离机理的探索

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Recently developed oxygen O18 method [K. Franzreb,J. Lorincik, P. Williams, Surf. Sci. 573 (2004) 291; R.C. Sobers, K. Franzreb, P. Williams, Appl. Surf. Sci. 231-232 (2004) 729; P. Williams, R.C. Sobers Jr., K. FranzrebJ. Lorincik, Appl. Surf. Sci. 252 (2006) 6429] is able to quantitatively determine the flux ratio of oxygen to matrix species at dynamical SIMS sputtering. This flux ratio can be directly related to the surface oxygen concentration at dynamical sputtering - an important parameter controlling the ionization yield of emitted species. It is argued that the oxygen O18 method is a worthy step forward in gathering relevant experimental data that might eventually lead to the understanding of oxygen enhancement mechanism in SIMS. A current status of understanding of the ionization processes in SIMS is briefly discussed in terms of non-adiabatic strongly velocity dependent processes represented by the electron tunneling and bond-breaking models and in terms of electronic excitation processes represented by the surface-excitation model.
机译:最近开发的氧气O18方法[K.弗朗兹雷布Lorincik,P。Williams,冲浪。科学573(2004)291; R.C. Sobers,K。Franzreb,P。Williams,应用。冲浪。科学231-232(2004)729;威廉姆斯(R.C.)小Sobers,K.FranzrebJ。 Lorincik,应用冲浪。科学252(2006)6429]能够在动态SIMS溅射中定量确定氧与基质物质的通量比。该通量比可以与动态溅射时的表面氧浓度直接相关-这是控制发射物质的电离产率的重要参数。有人认为,氧气O18方法是收集相关实验数据的重要一步,这可能最终导致人们对SIMS中氧气增强机理的理解。根据电子隧穿和键断裂模型所代表的非绝热强速度相关过程以及表面激发模型所代表的电子激发过程,简要讨论了对SIMS中电离过程的理解的现状。

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