Clusterization Of Vacancy Defects In Zno Irradiated With 2 Mev O~+

摘要

Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O~+ ions to fluences from 10~(12)cm~(-2) to 10~(17)cm~(-2). At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm~(-1). At the highest fluences of 10~(16)-10~(17) cm~(-2) vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.