Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature

摘要

Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The structural, electrical, and optical properties of ZnO:Ga films were investigated in a wide temperature range from room temperature up to 400 ℃. The crystallinity and surface morphology of the films are strongly dependent on the growth temperatures, which in turn exert an influence on the electrical and optical properties of the ZnO:Ga films. The film deposited at 350 ℃ exhibited the relatively well crystallinity and the lowest resistivity of 3.4 × 10~(-4) Ω cm. More importantly, the low-resistance and high-transmittance ZnO:Ga films were also obtained at a low temperature of 150 ℃ by changing the sputtering powers, having acceptable properties for application as transparent conductive electrodes in LCDs and solar cells.