机译:脉冲激光辐照改性CdTe和CdZnTe晶体的表面状态和掺杂
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan V.E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, prospekt Nauky 41, Kyiv 03028, Ukraine;
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan;
V.E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, prospekt Nauky 41, Kyiv 03028, Ukraine;
V.E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, prospekt Nauky 41, Kyiv 03028, Ukraine;
V.E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, prospekt Nauky 41, Kyiv 03028, Ukraine;
Technological Educational Institute of Halkis, Thesi Skliro Street, Psahna, Evia, CR 34400, Greece;
CdTe and CdZnTe barrier structures; laser irradiation; photoconductivity; I-V Characteristics;
机译:通过纳秒激光脉冲穿过CdTe晶体对CdTe-In接口的改性
机译:脉冲激光辐照下p-CdTe晶体表面结构的演变
机译:KrF准分子激光脉冲在熔化阈值附近辐照的CdTe晶体的表面状态
机译:HGCDTE,CDTE和CDZNTE中激光损伤演化的比较研究与纳秒1.06-μm波长多个脉冲
机译:1.06微米脉冲激光辐照下多脉冲激光对单晶金属表面的损伤
机译:液体环境中脉冲紫外激光辐照对硅表面润湿性的选择性区域改性
机译:飞秒激光脉冲辐照后ZnO单晶的应变表层分析
机译:激光诱导表面烧蚀和单脉冲和多脉冲激光辐照引起的Zns晶体的光学损伤。