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In situ low-angle cross sectioning: Bevel slope flattening due to self-alignment effects

机译:原位小角度横截面:由于自对准效应而使斜面变平

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Low-angle cross sections are produced inside an Auger microprobe using the equipped depth profile ion sputter gun. Simply the sample is partly covered by a mask. Utilizing the edge of this mask the sample is sputtered with ions. Due to the shading of the mask a cross section is produced in the sample. The slope of this cross section is considerably shallower than given by the geometrical setup. This is attributed to self-alignment effects, which are due to missing sputter cascades in the transition area between sputtered and shaded sample regions and a chamfering of the mask edge.rnThese self-alignment effects are studied here using a 104.6 nm thick SiO_2 layer thermally grown on a Si substrate. In this study on one hand for a fixed ion impact angle of 15.8° as function of the sputter time several in situ low-angle cross sections were produced. This way slope angles between an ultimate low slope angle of 0.014° and 0.085° were achieved. On the other hand for a fixed sputter time the ion impact angle was varied between 14.8° and 70.8°. For these samples cross section slope angles between 0.031° and 0.32° are observed. These results demonstrate the distinct slope flatting of in situ cross sectioning.
机译:使用配备的深度剖面离子溅射枪在俄歇微探针内部产生低角度横截面。只是样品部分被面罩覆盖。利用该掩模的边缘,样品被离子溅射。由于掩模的阴影,在样品中产生了横截面。该横截面的斜率比几何设置所给定的要浅得多。这归因于自对准效应,这是由于在溅射的样品区域和阴影的样品区域之间的过渡区域中缺少溅射级联以及对掩模边缘进行了倒角所致。在这里,我们使用104.6 nm厚的SiO_2层对这些自对准效应进行了热研究在Si衬底上生长。一方面,在这项研究中,固定离子碰撞角为15.8°,随溅射时间而变,产生了多个原位小角度横截面。这样,获得了介于0.014°和0.085°的极限低倾斜角之间的倾斜角。另一方面,对于固定的溅射时间,离子撞击角在14.8°和70.8°之间变化。对于这些样品,观察到的横截面倾斜角在0.031°和0.32°之间。这些结果证明了原位横截面的明显斜率平坦。

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