Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature

摘要

In the search for silicon technology compatible substrate for III-nitride epitaxy, we present a proof-of-concept for forming epitaxial SiC layer on Si( 1 1 1). A C/Si interface formed by ion sputtering is exposed to 100-1500 eV Ar~+ ions, inducing a chemical reaction to form SiC, as observed by core-level X-ray photoelectron spectroscopy (XPS). Angle dependent XPS studies shows forward scattering feature that manifest the epitaxial SiC layer formation, while the valence band depicts the metal to insulator phase change.