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Mg-based Photocathodes Prepared By Ns, Ps And Fs Pld For The Production Of High Brightness Electron Beams

机译:Ns,Ps和Fs Pld制备的Mg基光电阴极,用于生产高亮度电子束

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Mg-based films have been prepared by pulsed laser deposition technique for photocathode applications. We have investigated the influence of pulse laser duration on morphology and photoemissive properties. Two laser sources have been used, generating pulses of 30 ns at 308 nm (XeCl excimer laser), 5 ps and 500 fs at 248 nm (KrF excimer laser) to grow Mg films onto Si and Cu substrates in high vacuum (~10~(-7)Pa) and at room temperature. Morphological investigations carried out by scanning electron microscopy (SEM) have revealed that, in our experimental conditions, the number and the mean size of the droplets on the films surfaces decreases as the pulse laser duration shortens. The contamination level of Mg film surfaces have been studied by energy dispersive X-ray spectroscopy (EDX). The photoelectron performances in terms of quantum efficiency (QE) and emission stability have been tested in a UHV DC photodiode cell (10~(-7) Pa). Measures of the QE of the samples surfaces have revealed a decrease on the initial value for Mg-based photocathodes prepared by fs laser (from 7.8 × 10~(-4) to 6.6 × 10~(-4)) PLD with respect to ps (from 6.2 × 10~(-4) to 7.4 × 10~(-4))andns lasers (from 5.0 × 10~(-4) to 1.6 × 10~(-4)). A comparison among Mg-based photocathodes prepared by ns, ps and fs PLD for the production of high brightness electron beams has been presented and discussed.
机译:基于镁的薄膜已经通过脉冲激光沉积技术制备用于光电阴极。我们已经研究了脉冲激光持续时间对形态和光发射特性的影响。已经使用了两种激光源,分别在308 nm(XeCl准分子激光)处产生30 ns的脉冲,在248 nm(KrF准分子激光下)产生5 ps和500 fs的脉冲,以在高真空(〜10〜 (-7)Pa)和室温下。通过扫描电子显微镜(SEM)进行的形态学研究表明,在我们的实验条件下,随着脉冲激光持续时间的缩短,膜表面上液滴的数量和平均大小会减小。镁薄膜表面的污染水平已通过能量色散X射线光谱(EDX)进行了研究。已经在特高压直流光电二极管电池(10〜(-7)Pa)中测试了基于量子效率(QE)和发射稳定性的光电子性能。样品表面QE的测量表明,用fs激光制备的Mg基光电阴极的初始值相对于ps从7.8×10〜(-4)降低到6.6×10〜(-4))。 (从6.2×10〜(-4)到7.4×10〜(-4))和激光器(从5.0×10〜(-4)到1.6×10〜(-4))。提出并讨论了用ns,ps和fs PLD制备的Mg基光电阴极之间的比较,以产生高亮度电子束。

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