机译:铜箔上制备的锰掺杂钛酸锶锶钡薄膜的微观结构和电性能
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China,Institute of Marine Materials Science and Engineering, Shanghai Maritime University, Shanghai 200135, China;
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China;
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China;
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China;
Institute of Marine Materials Science and Engineering, Shanghai Maritime University, Shanghai 200135, China;
Department of Physics, The Chinese University of Hong Kong, Hong Kong, China;
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China;
thin films; sol-gel growth; microstructure; electrical properties;
机译:使用自缓冲层通过脉冲激光沉积在铜箔上生长的钛酸锶钡钛薄膜的改进性能
机译:使用自缓冲层通过脉冲激光沉积在铜箔上生长的钛酸锶钡钛薄膜的改进性能
机译:溶胶-凝胶法制备钛酸锶锶钡薄膜的微观结构和介电性能的研究
机译:通过在溶胶前体中加入PEG在铜箔上制备钛酸锶锶钡薄膜的微观结构和性能
机译:工艺对热液钛酸钡和钛酸钡钡薄膜的微结构和介电性能的影响。
机译:脉冲激光沉积制备的氮取代钛酸锶锶薄膜的光学性质
机译:热退火对钛酸钡锶钡锶锶形态的影响:对电性能的影响
机译:用于211 dram应用的钛酸锶钡薄膜的微观结构和非化学计量