机译:边缘形状和宽度对硅纳米带结构和电子性能的影响
College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi, PR China College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, Henan, PR China;
ICMMO/LEMHE UMR CNRS 8182, Universite Paris-Sud 11,91405 Orsay Cedex, France;
rnCollege of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi, PR China;
College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, Henan, PR China;
silicene nanoribbons; structure; electronic property; edge state; first-principles;
机译:边缘官能化与掺杂对硅纳米杆稳定性,电子和磁性的影响
机译:边缘官能化与掺杂对硅纳米杆稳定性,电子和磁性的影响
机译:锯齿形边缘硅纳米带的宽度依赖性光学特性
机译:掺铱之字形硅纳米带的结构和电子性质
机译:原子无序对硅(1-x)锗(x)中结构,电子和声子性质的影响。
机译:硅纳米带的电子结构:两边化学修饰和第一性原理研究
机译:自旋相关的弹道输运特性和电子结构 原始和边缘掺杂的之字形硅质纳米带:大 磁阻
机译:mgO中金的结构和光学性质:形状和界面的影响。