机译:铝掺杂ZnO薄膜的结构特性取决于厚度及其对电学性能的影响
Department of Electric Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;
Department of Electric Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;
Department of Electric Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;
Department of Electric Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;
Department of Electric Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;
Department of Electric Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;
al doped zinc oxide; transparent conducting film; film thickness;
机译:膜厚对射频磁控溅射法在玻璃和Al_2o_3(0001)衬底上制备的Ga掺杂Zno薄膜的结构和电性能的影响
机译:厚度对线性面对靶溅射生长的Al和Ga共掺杂ZnO薄膜的电,光学,结构和形态性能的影响
机译:厚度对溶胶-凝胶法沉积Co和Al掺杂Zno薄膜结构,电,光,磁性能的影响
机译:厚度对RF磁控溅射沉积的铝掺杂ZnO膜结构,电和光学性质的影响
机译:掺钇的氧化oxide纳米晶体薄膜的结构,光学和电学性质。
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:掺杂浓度对由化学浴沉积法生长的内在N型ZnO(I-ZnO)和(Cu,Na和K)掺杂P型ZnO薄膜的光学和电性能的影响