机译:残留气体对磁控溅射制备碳化硼薄膜的影响
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China Department of Physics, King's College London, Strand, London, WC2R 2LS, UK;
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;
Key Laboratory of Advanced Microstructure Materials, Ministry of Education, Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;
Department of Physics, King's College London, Strand, London, WC2R 2LS, UK;
Department of Physics, King's College London, Strand, London, WC2R 2LS, UK;
Boron carbide; Magnetron sputtering; Residual gas; XPS; Wavelet transform;
机译:磁控溅射碳化硼制备单层和多层氮化硼和碳化硼薄膜的合成与表征
机译:N2和CH4对磁控溅射制备硼基薄膜沉积速率的影响
机译:氢高分压对射频磁控溅射制备碳化硅薄膜纳米晶体结构影响的研究
机译:由热压硼碳化硼靶的DC磁控溅射生长碳化硼薄膜的表征
机译:非垂直入射反应磁控溅射制备的金属氮化物(氮化铝,氮化钛,氮化ha)薄膜的织构演变。
机译:磁控溅射技术制备的金属氧化物薄膜在微波频率范围内的挥发性有机物检测
机译:溅射压力对射频磁控溅射制备的Zn_