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Impedance spectroscopy of undoped and Cr-doped ZnO gas sensors under different oxygen concentrations

机译:不同氧浓度下未掺杂和Cr掺杂的ZnO气体传感器的阻抗谱

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Thin films of undoped and chromium (Cr)-doped zinc oxide (ZnO) were synthesized by RF reactive co-sputtering for oxygen gas sensing applications. The prepared films showed a highly c-axis oriented phase with a dominant (002) peak appeared at a Bragg angle of around 34.13°. which was lower than that of the standard reference of ZnO powder (34.42°). The peak shifted to a slightly higher angle with Cr doping. The operating temperature of the ZnO gas sensor was around 350 °C, which shifted to around 250 °C with Cr-doping. The response of the sensor to oxygen gas was enhanced by doping ZnO with 1 at.% Cr. Impedance spectroscopy analysis showed that the resistance due to grain boundaries significantly contributed to the characteristics of the gas sensor.
机译:通过射频反应共溅射合成了未掺杂和铬(Cr)掺杂的氧化锌(ZnO)薄膜,用于氧气传感应用。所制备的膜显示出高度c轴取向的相,且在约34.13°的布拉格角处出现显性(002)峰。低于ZnO粉末的标准参考值(34.42°)。 Cr掺杂使峰移至稍高的角度。 ZnO气体传感器的工作温度约为350°C,在掺杂Cr后会转变为250°C。通过将ZnO掺杂1 at。%的Cr可以增强传感器对氧气的响应。阻抗谱分析表明,由于晶界引起的电阻极大地影响了气体传感器的特性。

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