机译:Ni-P / Si(100)体系中固相反应外延生长具有原子平面硅化物/ Si界面的均匀NiSi_2层
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan, ROC;
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan, ROC;
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan, ROC;
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan, ROC;
Department of Chemical and Materials Engineering, National Central University, Taoyuan, Taiwan, ROC;
Department of Materials Science and Engineering, National United University, Miao-Li 36003, Taiwan, ROC;
nickel silicide; phosphorous; interface;
机译:Ni / Ti / Si(001)体系中固相反应低温形成外延NiSi_2层
机译:点接触反应对硅纳米线中弹性应变涨落对外延硅化物原子层生长的影响
机译:超净低压CVD法在B吸附的Si(100)上外延生长Si时重B原子层的掺杂特性
机译:Ni / Ti / Si(001)原子接触界面中外延NiSi_2层的生长机理
机译:有限反应处理在原子层外延上的应用:使用有机金属前体外延生长碲化镉。
机译:外延原位SiO2钝化(100)利用TaSiOx原子层沉积工艺制备和(110)InGaAs
机译:在Si(100)上用于层间和合金体系的镍稀土硅化物的生长特性的原位研究
机译:通过退火(100)si的CoTi双层,在外延Cosi(sub 2)生长期间形成瞬态相